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this is information on a product in full production. april 2012 doc id 18337 rev 2 1/18 18 STB4N62K3, std4n62k3 n-channel 620 v, 1.7 , 3.8 a supermesh3? power mosfet in d 2 pak and dpak packages datasheet ? production data features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitance improved diode reverse recovery characteristics zener-protected application switching applications description these devices are made using the supermesh3? power mosfet technology that is obtained via improvements applied to stmicroelectronics? supermesh? technology combined with a new optimized vertical structure. the resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max i d pw STB4N62K3 std4n62k3 620 v < 2 3.8 a 70 w d2pak dpak 1 3 tab 1 3 tab d(2,tab) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging STB4N62K3 std4n62k3 4n62k3 d2pak dpak tape and reel www.st.com
contents STB4N62K3, std4n62k3 2/18 doc id 18337 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STB4N62K3, std4n62k3 electrical ratings doc id 18337 rev 2 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pa k d pa k v ds drain-source voltage 620 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 3.8 a i d drain current (continuous) at t c = 100 c 2 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 15.2 a p tot total dissipation at t c = 25 c 70 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 3.8 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 115 mj v esd(g-s) gate source esd(hbm-c = 100 pf, r = 1.5 k ) 2500 v dv/dt (2) 2. i sd 3.8 a, di/dt = 400 a/s, v dd = 80% v (br)dss , vds peak v(br)dss . peak diode recovery voltage slope 12 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak d2pak r thj-case thermal resistance junction-case max 1.79 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu. thermal resistance junction-pcb max 50 30 c/w
electrical characteristics STB4N62K3, std4n62k3 4/18 doc id 18337 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 620 v i dss zero gate voltage drain current v gs = 0, v ds = 620v 1 a v gs = 0 v ds = 620v, t c =125 c 50 a i gss gate-body leakage current v ds = 0, v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on- resistance v gs = 10 v, i d = 1.9 a 1.7 2 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 550 42 7 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 496 v, v gs = 0 - 27 - pf r g intrinsic gate resistance f = 1 mhz open drain 2 5 10 q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 496 v, i d = 3.8 a, v gs = 10 v (see figure 18 ) - 22 4 13 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 300 v, i d = 1.9 a, r g = 4.7 , v gs = 10 v (see figure 17 ) - 10 9 29 19 - ns ns ns ns
STB4N62K3, std4n62k3 electrical characteristics doc id 18337 rev 2 5/18 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 3.8 15.2 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 3.8 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3.8 a, di/dt = 100 a/s v dd = 60 v (see figure 22 ) - 220 1.4 13 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3.8 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 22 ) - 270 1.9 14 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 30 - v
electrical characteristics STB4N62K3, std4n62k3 6/18 doc id 18337 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for d2pak figure 3. thermal impedance for d2pak figure 4. safe operating area for dpak figure 5. thermal impedance for dpak figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am07172v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0717 3 v1 i d 3 2 1 0 0 10 v d s (v) 20 (a) 5 15 25 4 5 5v 6v 7v v g s =10v 6 7 8 am07175v1 i d 3 2 1 0 0 4 v g s (v) 8 (a) 2 6 4 5 6 v d s =15v am07176v1
STB4N62K3, std4n62k3 electrical characteristics doc id 18337 rev 2 7/18 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =496v i d = 3 . 8 a 25 12 3 00 200 100 0 400 500 v d s v g s am07177v1 r d s (on) 1. 8 1.7 1.6 1.5 0 2 i d (a) ( ) 1 3 1.9 v g s =10v am0717 8 v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am07179v1 e o ss 1.5 1.0 0.5 0 0 100 v d s (v) ( j) 400 2.0 200 3 00 2.5 3 .0 500 600 am071 8 0v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 am071 8 1v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 25 75 125 2.5 am071 8 2v1
electrical characteristics STB4N62K3, std4n62k3 8/18 doc id 18337 rev 2 figure 14. maximum avalanche energy vs starting tj figure 15. normalized b vdss vs temperature figure 16. source-drain diode forward characteristics e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 10 20 3 0 40 120 140 50 60 70 8 0 100 110 120 i d = 3 . 8 a v dd =50 v 90 am071 8 4v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 am071 83 v1 v s d 0 2 i s d (a) (v) 1 5 3 4 0.1 0.2 0. 3 0.4 0.5 0.6 0.7 t j =25c t j =150c t j =-50c 0. 8 0.9 1.0 am0 8888 v1
STB4N62K3, std4n62k3 test circuits doc id 18337 rev 2 9/18 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STB4N62K3, std4n62k3 10/18 doc id 18337 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
STB4N62K3, std4n62k3 package mechanical data doc id 18337 rev 2 11/18 figure 23. dpak (to-252) drawing figure 24. dpak footprint (a) a. all dimension are in millimeters 006 8 772_i 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
package mechanical data STB4N62K3, std4n62k3 12/18 doc id 18337 rev 2 table 10. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
STB4N62K3, std4n62k3 package mechanical data doc id 18337 rev 2 13/18 figure 25. d2pak (to-263) drawing figure 26. d2pak footprint (b) b. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
packaging mechanical data STB4N62K3, std4n62k3 14/18 doc id 18337 rev 2 5 packaging mechanical data table 11. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000
STB4N62K3, std4n62k3 packaging mechanical data doc id 18337 rev 2 15/18 figure 27. tape for dpak (to-252) and d2pak (to-263) r50 t 0.25 0.35 w 23.7 24.3 table 12. d2pak (to-263) tape and reel mechanical data (continued) tape reel dim. mm dim. mm min. max. min. max. p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2
packaging mechanical data STB4N62K3, std4n62k3 16/18 doc id 18337 rev 2 figure 28. reel for dpak (to-252) and d2pak (to-263) a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
STB4N62K3, std4n62k3 revision history doc id 18337 rev 2 17/18 6 revision history table 13. document revision history date revision changes 16-dec-2010 1 first release. 26-apr-2012 2 added min and max values for r g in ta bl e 5 : d y n a m i c and section 5: packaging mechanical data . updated section 4: package mechanical data . minor text changes.
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